Read e-book online 3-Dimensional Process Simulation PDF

By Masato Fujinaga, Norihiko Kotani (auth.), J. Lorenz (eds.)

ISBN-10: 3709169054

ISBN-13: 9783709169056

ISBN-10: 3709174309

ISBN-13: 9783709174302

Whereas two-dimensional semiconductor technique simulation has accomplished a undeniable measure of adulthood, third-dimensional technique simulation is a newly rising box within which such a lot efforts are devoted to useful uncomplicated advancements. learn during this region is promoted through the turning out to be call for to procure trustworthy details on gadget geometries and dopant distributions wanted for three-d gadget simulation, and challenged by way of the good algorithmic difficulties because of relocating interfaces and by means of the requirement to restrict computation instances and reminiscence necessities. A workshop (Erlangen, September five, 1995) supplied a discussion board to debate the economic wishes, technical difficulties, and options being built within the box of third-dimensional semiconductor technique simulation. Invited displays from best semiconductor businesses and learn facilities of Excellence from Japan, the united states, and Europe defined novel numerical algorithms, actual versions, and purposes during this swiftly rising field.

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5 mol% 900 ·C • w U = 400nm E ro 600 .. 400 x~ I 800 N230min 950 ·C ........ A. - ........ ". 1 m ) Figure 23: Surface hight versus line and space in the line structure H. 6 fJ- m) Figure 24: Surface hight versus window width in the hole structure for the small window. This is because the maximum difference of the surface height at the low temperature is strongly affected by the initial deposition shape of BPSG layer. 6. Conclusion We have described an overview of a three dimensional process simulator, SMARTP, which has been advanced through the development of the DRAM cells, CMOS processes and CCD devices.

F. Gibbons, W. S. Johnson and S. W. Mylroie, Projected Range Statistics, Semiconductor and Related Materials, 2nd ed. Halsted Press, 1975 56 H. : A Three-Dimensional Process Simulation using Advanced [16] D: Collard and K. Taniguchi, " IMPACT - A point-defect-based two dimensional process simulator: l\'lodeling the lateral oxidation-enhanced diffusion of dopants in silicon, " IEEE Trans. l0, pp. 1454-1462, Oct. 1986 [17] R. B. Fair, J. J. Wortman and J. Liu, " Modeling rapid thermal diffusion of arsenic and boron in silicon, " J.

Levy, and D. L. Chadwick, " Modified phosphosilicate glasses for VLSI applications, " J. Electrochem. , vol. 132, no. 2, pp. 409-415, 1985 [27] M. Yoshimaru and H. Matsuhashi, Okidenki Kenkyu Kaihatsu, vol. 53, no. 2, pp. 79-, 1986 [28] R. B. Penumalli, " A comprehensive two-dimensional VLSI process simulator program, BICEPS, " IEEE Trans. Electron Devices, vol. ED-30, no. 9, pp. 986-992, Sept. 1983 3-DIMENSIONAL PROCESS SIMULATION Edited by J. Lorenz - September 1995 3-D Topography Simulation Using Surface Representation and Central Utilities A.

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3-Dimensional Process Simulation by Masato Fujinaga, Norihiko Kotani (auth.), J. Lorenz (eds.)

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